PLENARY SPEAKERS
Dr. Chong Leong, Gan received his B.S. degree in Chemical Engineering from National University of Malaysia in 2000, M.S. degree in Chemical Instrumentation in 2003 from University Science Malaysia, and Ph.D. in Nanoelectronic Engineering from University Malaysia Perlis, Malaysia in 2015. He is Senior Member of IEEE, Fellow of Institution of Engineering and Technology, Fellow of Institute of Materials, Minerals & Mining, UK., Fellow of Institute of Physics, UK., and Royal Society of Chemistry, UK. Since 2000, he has been with Silterra Malaysia, Quality and Reliability MTS with Altera, Product Engineering with Osram Opto-Semiconductors, Broadcom, Senior R&D Engineering Manager with SanDisk and currently working as Package Characterization Director with Micron Taiwan. He is recipient of IEEE EPS Distinguish Technical Leadership Certificate in 2021, Emerald Outstanding Journal Reviewer in 2021 and ASME JEP Reviewer of the Year in 2022. His research interests including semiconductor packaging reliability, electronic packaging materials characterization, nanomaterials, and radiation reliability. He has published more than 75 international journal articles, 1 book with Springer Publisher. CL serves as Editorial boards with more than 25 international journals, Guest Editor with Elsevier Materials Science in Semiconductor Processing and Emerald Microelectronics Internal journals. He has 30 patents issued/ filing in US and China patent offices.
Abstract - With the recent innovation of Open AI (Artificial Intelligence) and ChatGPT deployment, this increase has triggered the growth of data center infrastructure as processing, storage, and communication system in the digital world. The data center itself has contributed 1.5 % to the total world electricity consumption and this is expected to increase with time. Continuous higher demand for low power, larger data storage and faster transport speed are pushing the memory key suppliers to provide the advanced packages solutions such as NAND-Based MCP (Multiple Chip Package), HBM (High Bandwidth Memory), immersion-cooled and future cryogenic memory computing in AI Datacenters. This talk lays out the technical requirements of semiconductor electronics materials roadmaps, development, and properties with closer interactions on packaging robustness. It encompasses its package strength, component and solder joint reliability, package warpage performance, thermal dissipation as well as radiation induced soft errors, which become more important due to higher susceptibility of these packages to external thermal-mechanical stresses in AI datacenter applications. Evolution of these key assembly materials will be discussed in terms of its technical challenges and enabling reasoning as well as possible failure modes and mechanisms to address the needs and callouts for identifying those key materials characteristics which are critical to memory system level packaging.
Prof. Ir. Dr. Ahmad Sabirin Zoolfakar is a Professional Engineer and academic at the Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), specializing in nanomaterials, thin films, and sensor technology. He earned his B.Eng. in Electrical Engineering from Universiti Malaya (2001), M.Sc. in Microelectronic Systems and Telecommunications from the University of Liverpool (2002), and Ph.D. in Nanotechnology from RMIT University, Australia (2014), where he received the Doctoral Research Excellence Prize. He began his career at MIMOS Berhad, serving as a researcher in the semiconductor industry before joining UiTM in 2007. To date, he has authored nearly 150 journal articles and 80 conference papers. He is a former Chair of IEEE EDS Malaysia Chapter, Chief Editor of JEESR, and an active member of BEM. Prof. Ahmad Sabirin also leads STEM and STEAM outreach programs for underrepresented and special needs children, supported by the IEEE EDS Humanitarian Fund.
Abstract - Reduced graphene oxide (rGO) and transition metal oxides represent advanced materials for next-generation sensors, attributed to their superior electronic, catalytic, and surface characteristics. Their performance is significantly influenced by nanoscale characteristics, including morphology, crystallinity, and interfacial structure. Electrodeposition serves as a cost-efficient and precise method for the direct engineering of properties on electrode surfaces, presenting notable benefits for the fabrication of sensors. The electrodeposition parameters, including applied potential, deposition time, precursor concentration, and electrolyte composition, were tuned to modulate film thickness, defect density, porosity, and surface functionalization. By controlling the reduction degree of graphene oxide during electrodeposition, we achieved tuneable electrical conductivity and surface reactivity, which are critical for charge transfer kinetics. Similarly, electrodeposited metal oxides such as ZnO, CuO, Cu₂O, Nb₂O₅, and Ta₂O₅ were engineered with tailored crystallinity, nanostructure morphology, and oxygen vacancy concentration, enhancing their redox activity and catalytic efficiency. Additionally, the electrochemical and surface characterisations indicated that adjusting electrodeposition conditions directly improved sensitivity, reduced detection limits, and enhanced the stability of the fabricated sensors. The presented research demonstrates the effectiveness of electrodeposition as a flexible and scalable method for customising nanostructured reduced graphene oxide (rGO) and metal oxides, thereby facilitating advanced sensing applications in environmental monitoring, biomedical diagnostics, and industrial process control.