Distinguished Prof. Dr. Asad M. Madni
Prof.Dr. Park Young June
ypark@snu.ac.kr
Physical Electronics Laboratory, Seoul National University
02-880-7274Title : There is plenty of room at the Silicon
Abstract
As the silicon technology is scaled down to sub. 10nm and most advanced chips are fabricated mostly in the industry, silicon related researches draw less attention from young researchers. Rather, academia researches on electronics are shifted to exploring new materials such as graphene, 2D metal oxide and carbon nanotube.
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Prof. Dr. Edward Yi Chang
408, Microelectron and Information Research Center,
Dept. Materials Science and Engineering,
National Chiao Tung University, Hsin Chu, Taiwan, ROCOffice Number: 408, Microelectron and Information Research Center
Tel: +886-3-5131536
Fax: +886-3-5751826
Title : Realization of GaN-Based Technology for High Power and High Power Applications
Abstract
Wide band gap semiconductor of GaN and its related materials are promising for future power and high frequency applications.
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Prof. Dr. Arokia Nathan
Electrical Engineering Division, Cambridge University
9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
Tel: +44 (0) 1223 748302
Fax: +44 (0) 1223 748322
Title: Amorphous Oxide Electronics
Abstract
Oxide semiconductors are known for their optical transparency and high
electron mobility even when processed at room temperature, making them a
promising candidate for the next-generation thin film transistor (TFT)
technology.
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Prof. Dr. Abdelkrim Khelif
Senior researcher at CNRS Femto-st institute
FEMTO-ST Institute,
UMR CNRS 6174, 32 Avenue de l'Observatoire,
Besancon, France
Title : Acoustic Metamaterials and phononic crystals: towards the total control of the wave propagation
Abstract
Classical waves, including elastic waves (acoustic waves) and electromagnetic waves (optical waves and microwaves), are described by conventional wave-propagation functions.
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Prof. Dr. Hiroshi Inokawa
Professor, Research Institute of Electronics
Shizuoka University, Japan
Title : SOI photodiode with surface plasmon antenna: from sensitivity enhancement to refractive index measurement for biosensing
Abstract
In order to enhance the performance and functionality of the pn-junction photodiode in silicon on insulator (SOI), metallic line-and-space (L/S) surface plasmon (SP) antenna is introduced.
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